​ ​

January 9, 2017

41. A physically transient form of silicon electronics

S.-W. Hwang, H. Tao, D.-H. Kim, H. Cheng, J.-K. Song, E. Rill, M. A. Brenckle, B. Panilaitis, S. M. Won, Y.-S. Kim, Y. M. Song, K. J. Yu, A. Ameen, R. Li, Y. Su, M. Yang, D. L. Kaplan, M. R. Zakin, M. J. Slepian, Y. Huang, F. G. Omenetto and J. A. Rogers

Science 337, 1459 (2012).

[PDF]

 

Share on Facebook
Share on Twitter
Please reload

School of Electrical Engineering and Computer Science, Gwangju Institute of Science Technology,

123, Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea

Tel : +82-62-715-2655 Fax : +82-62-715-2657

© 2017 by FOEL. Proudly created by YJs. All Rights reserved.